Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation

J. S. Williams; W. L. Brown; H. J. Leamy; J. M. Poate; J. W. Rodgers; D. Rousseau; G. A. Rozgonyi; J. A. Shelnutt; T. T. Sheng

doi:10.1063/1.90430

Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation

J. S. Williams, W. L. Brown, H. J. Leamy, J. M. Poate, J. W. Rodgers, D. Rousseau, G. A. Rozgonyi, J. A. Shelnutt, T. T. Sheng

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.

Original language	English (US)
Pages (from-to)	542-544
Number of pages	3
Journal	Applied Physics Letters
Volume	33
Issue number	6
DOIs	https://doi.org/10.1063/1.90430
State	Published - 1978
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{ec8a727de8584aa5a00ae94abc25fd80,

title = "Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation",

abstract = "Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.",

author = "Williams, {J. S.} and Brown, {W. L.} and Leamy, {H. J.} and Poate, {J. M.} and Rodgers, {J. W.} and D. Rousseau and Rozgonyi, {G. A.} and Shelnutt, {J. A.} and Sheng, {T. T.}",

year = "1978",

doi = "10.1063/1.90430",

language = "English (US)",

volume = "33",

pages = "542--544",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation

AU - Williams, J. S.

AU - Brown, W. L.

AU - Leamy, H. J.

AU - Poate, J. M.

AU - Rodgers, J. W.

AU - Rousseau, D.

AU - Rozgonyi, G. A.

AU - Shelnutt, J. A.

AU - Sheng, T. T.

PY - 1978

Y1 - 1978

N2 - Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.

AB - Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.

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UR - http://www.scopus.com/inward/citedby.url?scp=13044292894&partnerID=8YFLogxK

U2 - 10.1063/1.90430

DO - 10.1063/1.90430

M3 - Article

AN - SCOPUS:13044292894

SN - 0003-6951

VL - 33

SP - 542

EP - 544

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation

Abstract

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