Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)