Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation

J. S. Williams, W. L. Brown, H. J. Leamy, J. M. Poate, J. W. Rodgers, D. Rousseau, G. A. Rozgonyi, J. A. Shelnutt, T. T. Sheng

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Abstract

Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.

Original languageEnglish (US)
Pages (from-to)542-544
Number of pages3
JournalApplied Physics Letters
Volume33
Issue number6
DOIs
StatePublished - Dec 1 1978
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Williams, J. S., Brown, W. L., Leamy, H. J., Poate, J. M., Rodgers, J. W., Rousseau, D., Rozgonyi, G. A., Shelnutt, J. A., & Sheng, T. T. (1978). Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation. Applied Physics Letters, 33(6), 542-544. https://doi.org/10.1063/1.90430