Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation

J. S. Williams, W. L. Brown, H. J. Leamy, J. M. Poate, J. W. Rodgers, D. Rousseau, G. A. Rozgonyi, J. A. Shelnutt, T. T. Sheng

Research output: Contribution to journalArticlepeer-review

78 Scopus citations


Arsenic- and antimony-implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing-angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid-phase regrowth from the underlying crystalline-amorphous interface. No implant redistribution is observed.

Original languageEnglish (US)
Pages (from-to)542-544
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - 1978
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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