LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING.

J. M. Poate, J. C. Bean, W. L. Brown, R. L. Cohen, L. C. Feldman, H. J. Leamy, J. W. Rodgers, D. Rousseau, G. A. Rozgonyi, J. A. Shelnutt, T. T. Sheng, K. W. West, J. S. Williams, G. K. Celler

Research output: Contribution to journalConference article

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Abstract

Ion implanted and deposited Si layers have been recrystallized using pulsed Nd:YAG and cw Ar ion laser irradiation and thermally assisted flash annealing. By use of Rutherford backscattering and channeling, TEM, SEM and interference optical microscopy techniques, two distinct regrowth regimes have been established. (1) Liquid phase where regrowth occurs form the underlying solid-liquid interface. In this regime the regrowth layer is free of extended defects, dopant profiles are consistent with liquid diffusion and equilibrium solid solubilities can be exceeded. (2) Solid phase where regrowth occurs from the amorphous single-crystal interface. No dopant redistribution is observed.

Original languageEnglish (US)
Pages (from-to)167-174
Number of pages8
JournalRadiation effects
Volume48
Issue number1-4
Publication statusPublished - Jan 1 1978
Externally publishedYes
EventProc of the Int Conf on Ion Beam Modif of Mater - Budapest, Hung
Duration: Sep 4 1978Sep 8 1978

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Poate, J. M., Bean, J. C., Brown, W. L., Cohen, R. L., Feldman, L. C., Leamy, H. J., ... Celler, G. K. (1978). LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING. Radiation effects, 48(1-4), 167-174.