Line growth on the H/Si(100)-2 × 1 surface: Density functional study of allylic mercaptan reaction mechanisms

Glen A. Ferguson, Christopher Trong Linh Than, Krishnan Raghavachari

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The growth of molecular lines on the Si(100)-2 × 1 surface is an area of intense interest due to its possible application to the microelectronics industry. While many molecules have been found to grow along dimer rows of the Si(100)-2 × 1 surface, only allylic mercaptan (ALM) has been shown to grow exclusively across dimer rows. In this work, we compare several possible mechanisms for line growth across silicon dimer rows. We conclude that a reaction mechanism starting from a branched carbon radical adsorbed on the surface and ending with an interdimer bridged structure is the most probable mechanism for initial ALM reactivity.

Original languageEnglish (US)
Pages (from-to)18817-18822
Number of pages6
JournalJournal of Physical Chemistry C
Volume113
Issue number43
DOIs
StatePublished - Nov 20 2009
Externally publishedYes

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Sulfhydryl Compounds
thiols
Dimers
dimers
Silicon
microelectronics
Microelectronics
Carbon
reactivity
industries
Molecules
carbon
silicon
molecules
Industry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry

Cite this

Line growth on the H/Si(100)-2 × 1 surface : Density functional study of allylic mercaptan reaction mechanisms. / Ferguson, Glen A.; Than, Christopher Trong Linh; Raghavachari, Krishnan.

In: Journal of Physical Chemistry C, Vol. 113, No. 43, 20.11.2009, p. 18817-18822.

Research output: Contribution to journalArticle

Ferguson, Glen A. ; Than, Christopher Trong Linh ; Raghavachari, Krishnan. / Line growth on the H/Si(100)-2 × 1 surface : Density functional study of allylic mercaptan reaction mechanisms. In: Journal of Physical Chemistry C. 2009 ; Vol. 113, No. 43. pp. 18817-18822.
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