Iron Oxide-An Inorganic Photoresist and Mask Material

W. Robert Sinclair, Denis L. Rousseau, J. J. Stancavish

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The etching rate in dilute acids of iron oxide thin films prepared either by sputtering in CO/CO2 mixtures or by low temperature chemical vapor deposition techniques, may be modified by irradiation with an argon-ion cw laser. Depending on the exposure time and power levels used, laser irradiation may (i) leave the film unaffected, (ii) greatly reduce its solubility, or (Hi) completely remove the film. For exposures ranging from several seconds to a few minutes, the power level necessary to produce low solubility is several hundred milliwatts per square millimeter. Film evaporation begins at a few watts per square millimeter. By rapidly translating the film through the focal point of a laser beam, regions of reduced solubility in the form of a line as narrow as 1 μm have been obtained at writing velocities of 2000 cm/ sec. It is proposed that with these techniques, iron oxide “see through” masks for use in integrated circuit technology may be written directly.

Original languageEnglish (US)
Pages (from-to)925-928
Number of pages4
JournalJournal of the Electrochemical Society
Volume121
Issue number7
DOIs
StatePublished - Jan 1 1974
Externally publishedYes

Fingerprint

Photoresists
Iron oxides
Masks
Solubility
Argon
Laser beam effects
Carbon Monoxide
Oxide films
Laser beams
Sputtering
Integrated circuits
Chemical vapor deposition
Etching
Evaporation
Irradiation
Ions
Thin films
Acids
ferric oxide
Lasers

Keywords

  • laser irradiation
  • photomasks
  • thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Iron Oxide-An Inorganic Photoresist and Mask Material. / Sinclair, W. Robert; Rousseau, Denis L.; Stancavish, J. J.

In: Journal of the Electrochemical Society, Vol. 121, No. 7, 01.01.1974, p. 925-928.

Research output: Contribution to journalArticle

Sinclair, W. Robert ; Rousseau, Denis L. ; Stancavish, J. J. / Iron Oxide-An Inorganic Photoresist and Mask Material. In: Journal of the Electrochemical Society. 1974 ; Vol. 121, No. 7. pp. 925-928.
@article{bcd3c54023664f16ac1d5d932156f5dd,
title = "Iron Oxide-An Inorganic Photoresist and Mask Material",
abstract = "The etching rate in dilute acids of iron oxide thin films prepared either by sputtering in CO/CO2 mixtures or by low temperature chemical vapor deposition techniques, may be modified by irradiation with an argon-ion cw laser. Depending on the exposure time and power levels used, laser irradiation may (i) leave the film unaffected, (ii) greatly reduce its solubility, or (Hi) completely remove the film. For exposures ranging from several seconds to a few minutes, the power level necessary to produce low solubility is several hundred milliwatts per square millimeter. Film evaporation begins at a few watts per square millimeter. By rapidly translating the film through the focal point of a laser beam, regions of reduced solubility in the form of a line as narrow as 1 μm have been obtained at writing velocities of 2000 cm/ sec. It is proposed that with these techniques, iron oxide “see through” masks for use in integrated circuit technology may be written directly.",
keywords = "laser irradiation, photomasks, thin films",
author = "Sinclair, {W. Robert} and Rousseau, {Denis L.} and Stancavish, {J. J.}",
year = "1974",
month = "1",
day = "1",
doi = "10.1149/1.2401954",
language = "English (US)",
volume = "121",
pages = "925--928",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "7",

}

TY - JOUR

T1 - Iron Oxide-An Inorganic Photoresist and Mask Material

AU - Sinclair, W. Robert

AU - Rousseau, Denis L.

AU - Stancavish, J. J.

PY - 1974/1/1

Y1 - 1974/1/1

N2 - The etching rate in dilute acids of iron oxide thin films prepared either by sputtering in CO/CO2 mixtures or by low temperature chemical vapor deposition techniques, may be modified by irradiation with an argon-ion cw laser. Depending on the exposure time and power levels used, laser irradiation may (i) leave the film unaffected, (ii) greatly reduce its solubility, or (Hi) completely remove the film. For exposures ranging from several seconds to a few minutes, the power level necessary to produce low solubility is several hundred milliwatts per square millimeter. Film evaporation begins at a few watts per square millimeter. By rapidly translating the film through the focal point of a laser beam, regions of reduced solubility in the form of a line as narrow as 1 μm have been obtained at writing velocities of 2000 cm/ sec. It is proposed that with these techniques, iron oxide “see through” masks for use in integrated circuit technology may be written directly.

AB - The etching rate in dilute acids of iron oxide thin films prepared either by sputtering in CO/CO2 mixtures or by low temperature chemical vapor deposition techniques, may be modified by irradiation with an argon-ion cw laser. Depending on the exposure time and power levels used, laser irradiation may (i) leave the film unaffected, (ii) greatly reduce its solubility, or (Hi) completely remove the film. For exposures ranging from several seconds to a few minutes, the power level necessary to produce low solubility is several hundred milliwatts per square millimeter. Film evaporation begins at a few watts per square millimeter. By rapidly translating the film through the focal point of a laser beam, regions of reduced solubility in the form of a line as narrow as 1 μm have been obtained at writing velocities of 2000 cm/ sec. It is proposed that with these techniques, iron oxide “see through” masks for use in integrated circuit technology may be written directly.

KW - laser irradiation

KW - photomasks

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=84951032647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951032647&partnerID=8YFLogxK

U2 - 10.1149/1.2401954

DO - 10.1149/1.2401954

M3 - Article

VL - 121

SP - 925

EP - 928

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 7

ER -