Erratum: Gap junctions formed by connexins 26 and 32 alone and in combination are differently affected by applied voltage (Proc. Natl. Acad. Sci. USA (October 1, 1991) 88 (8410-8414))

L. C. Barrio; T. Suchyna; T. Bargiello; Xian Xu Lie Xian Xu; R. S. Roginski; M. V.L. Bennett; B. J. Nicholson

doi:10.1073/pnas.89.9.4220-b

Erratum: Gap junctions formed by connexins 26 and 32 alone and in combination are differently affected by applied voltage (Proc. Natl. Acad. Sci. USA (October 1, 1991) 88 (8410-8414))

L. C. Barrio, T. Suchyna, T. Bargiello, Xian Xu Lie Xian Xu, R. S. Roginski, M. V.L. Bennett, B. J. Nicholson

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Pages (from-to)	4220
Number of pages	1
Journal	Proceedings of the National Academy of Sciences of the United States of America
Volume	89
Issue number	9
DOIs	https://doi.org/10.1073/pnas.89.9.4220-b
State	Published - 1992
Externally published	Yes

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10.1073/pnas.89.9.4220-b

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Barrio, L. C., Suchyna, T., Bargiello, T., Lie Xian Xu, X. X., Roginski, R. S., Bennett, M. V. L., & Nicholson, B. J. (1992). Erratum: Gap junctions formed by connexins 26 and 32 alone and in combination are differently affected by applied voltage (Proc. Natl. Acad. Sci. USA (October 1, 1991) 88 (8410-8414)). Proceedings of the National Academy of Sciences of the United States of America, 89(9), 4220. https://doi.org/10.1073/pnas.89.9.4220-b

Erratum : Gap junctions formed by connexins 26 and 32 alone and in combination are differently affected by applied voltage (Proc. Natl. Acad. Sci. USA (October 1, 1991) 88 (8410-8414)). / Barrio, L. C.; Suchyna, T.; Bargiello, T. et al.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 89, No. 9, 1992, p. 4220.

Research output: Contribution to journal › Comment/debate › peer-review

Barrio, LC, Suchyna, T, Bargiello, T, Lie Xian Xu, XX, Roginski, RS, Bennett, MVL & Nicholson, BJ 1992, 'Erratum: Gap junctions formed by connexins 26 and 32 alone and in combination are differently affected by applied voltage (Proc. Natl. Acad. Sci. USA (October 1, 1991) 88 (8410-8414))', Proceedings of the National Academy of Sciences of the United States of America, vol. 89, no. 9, pp. 4220. https://doi.org/10.1073/pnas.89.9.4220-b

Barrio LC, Suchyna T, Bargiello T, Lie Xian Xu XX, Roginski RS, Bennett MVL et al. Erratum: Gap junctions formed by connexins 26 and 32 alone and in combination are differently affected by applied voltage (Proc. Natl. Acad. Sci. USA (October 1, 1991) 88 (8410-8414)). Proceedings of the National Academy of Sciences of the United States of America. 1992;89(9):4220. doi: 10.1073/pnas.89.9.4220-b

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AU - Suchyna, T.

AU - Bargiello, T.

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Erratum: Gap junctions formed by connexins 26 and 32 alone and in combination are differently affected by applied voltage (Proc. Natl. Acad. Sci. USA (October 1, 1991) 88 (8410-8414))

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